PTFA092211EL ptfa092211fl confidential, limited internal distribution data sheet 1 of 10 rev. 02, 2009-05-27 all published data at t case = 25 c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! description the PTFA092211EL and ptfa092211fl are 220-watt, internally- matched ldmos fe ts intended for edge and wcdma applications in the 920 to 960 mhz band. manufactured with infineon's advanced ldmos process, these devices provide excellent thermal performance and superior reliability. ptf a092211el package h- 33288-2 thermally-enhanced high power rf ldmos fets 220 w, 920 ? 960 mhz two-carrier wcdma performance v dd = 30 v, i dq = 1.50 a, ? = 940 mhz, 3gpp wcdma signal, par = 6.5 db, 5 mhz carrier spacing 10 15 20 25 30 35 40 40 41 42 43 44 45 46 47 48 49 output power, avg. (dbm) drain efficiency (%) -50 -45 -40 -35 -30 -25 -20 acpr (dbc) efficiency acp rf characteristics ptf a092211fl package h- 34288-2 features ? broadband internal matching ? typical two-carrier wcdma performance at 940?mhz, 30 v - average output power = 50 w - linear gain = 18.0 db - efficiency = 30% - intermodulation distortion = ?37 dbc ? typical cw performance, 940 mhz, 30 v - output power at p?1db = 250 w - gain = 17.0 db - efficiency = 59% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 10:1 vswr @ 30 v, 220?w?(cw) output power ? pb-free, rohs-compliant and thermally-enhanced packages *see infineon distributor for future availability. two-carrier wcdma measurements (tested in infineon test fixture) v dd = 30 v, i dq = 1750 ma, p out = 50 w (avg), ? 1 = 937.5 mhz, ? 2 = 942.5 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 7.5 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 17.0 18.0 ? db drain efficiency h d 28.5 30 ? % intermodulation distortion imd ? ?34 ?32 dbc
data sheet 2 of 10 rev. 02, 2009-05-27 PTFA092211EL ptfa092211fl confidential, limited internal distribution rf characteristics (cont.) two-tone measurements (tested in infineon test fixture) v dd = 30 v, i dq = 1750 ma, p out = 220 w pep, ? = 940 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps ? 18.0 ? db drain efficiency h d ? 44 ? % intermodulation distortion imd ? ?29 ? dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.04 ? w operating gate voltage v ds = 30 v, i dq = 1750 ma v gs 2.0 2.5 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 700 w above 25 c derate by 4.0 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70 c, 220 w cw) r q jc 0.25 c/w ordering information type and version package type package description shipping marking PTFA092211EL v4 h-33288-2 thermally-enhanced slotted flange, tray PTFA092211EL single-ended ptfa092211fl v4 h-34288-2 thermally-enhanced earless flange, tray ptfa092211fl single-ended
PTFA092211EL ptfa092211fl confidential, limited internal distribution data sheet 3 of 10 rev. 02, 2009-05-27 cw performance gain & efficiency vs. output power v dd = 30 v, i dq = 1.75 a, ? = 940 mhz 14 15 16 17 18 19 20 35 40 45 50 55 output power (dbm) gain (db) 0 10 20 30 40 50 60 drain efficiency (%) efficiency gain cw performance gain & efficiency vs. output power v dd = 30 v, i dq = 1.75 a, ? = 940 mhz 14 15 16 17 18 19 20 35 40 45 50 55 output power (dbm) gain (db) 0 10 20 30 40 50 60 drain efficiency (%) efficiency gain t case = 25c t case = 90c typical performance (data taken in a production test fixture) two-tone broadband performance gain, efficiency & return loss vs. frequency v dd = 30 v, i dq = 1.75 a, p out = 110 w 15 20 25 30 35 40 45 900 910 920 930 940 950 960 970 980 frequency (mhz) efficiency (%), gain (db) -35 -30 -25 -20 -15 -10 -5 return loss (db) return loss gain efficiency power sweep, cw v dd = 30 v, ? = 940 mhz 16 17 18 19 30 35 40 45 50 55 output power (dbm) power gain (db) i dq = 1.6 a i dq = 2.0 a i dq = 1.2 a
PTFA092211EL ptfa092211fl confidential, limited internal distribution data sheet 4 of 10 rev. 02, 2009-05-27 six-carrier gsm performance v dd = 30 v, i dq = 1.6 a, ? = 940 mhz, p/ar = 7 db 0 10 20 30 40 50 60 37 39 41 43 45 47 49 output power (dbm) drain efficiency (%) -50 -45 -40 -35 -30 -25 -20 imd (dbc) , acpr (dbc) efficiency imd low gain imd up bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage (v) 2.33 a 4.65 a 9.33 a 11.64 a 13.98 a intermodulation distortion vs. output power v dd = 30 v, i dq = 1.75 a, ? 1 = 939 mhz, ? 2 = 940 mhz -80 -70 -60 -50 -40 -30 -20 40 44 48 52 56 output power, pep (dbm) imd (dbc) 5th 7th 3rd order typical performance (cont.)
data sheet 5 of 10 rev. 02, 2009-05-27 PTFA092211EL ptfa092211fl confidential, limited internal distribution 0.1 0.3 0.5 0.2 0.4 0 . 1 0 . 1 - w a v e l e n g t h s t o w a r d g e n e r a t o v e l e n g t h s t o w a r d l o a d - 0 . 0 z load z source 900 mhz 980 mhz broadband circuit impedance z source z load g s d frequency z source w z load w mhz r jx r jx 900 1.530 -0.650 1.480 -0.110 920 1.520 -0.380 1.430 0.180 940 1.520 -0.140 1.390 0.470 960 1.520 0.090 1.360 0.750 980 1.540 0.330 1.360 1.020 z 0 = 50 w
data sheet 6 of 10 rev. 02, 2009-05-27 PTFA092211EL ptfa092211fl confidential, limited internal distribution reference circuit reference circuit block diagram for ? = 960 mhz circuit assembly information dut PTFA092211EL or ptfa092211fl ldmos transistor pcb 0.76 mm [.030"] thick, e r = 3.48 rogers ro4350 1 oz. copper microstrip electrical characteristics at 960 mhz 1 dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.068 l , 52.0 w 12.78 x 1.60 0.503 x 0.063 l 2 0.041 l , 38.0 w 7.57 x 2.54 0.298 x 0.100 l 3 0.040 l , 38.0 w 7.34 x 2.54 0.289 x 0.100 l 4 0.056 l , 7.8 w 9.65 x 17.83 0.380 x 0.702 l 5 0.061 l , 7.8 w 10.59 x 17.83 0.417 x 0.702 l 6 0.208 l , 78.3 w 40.64 x 0.74 1.600 x 0.029 l 7, l 8 0.200 l , 60.1 w 38.10 x 1.24 1.500 x 0.049 l 9 0.102 l , 8.4 w 17.65 x 16.48 0.695 x 0.649 l 10 (taper) 0.044 l , 8.4 w / 12.0 w 7.82 x 16.48 / 11.0 0.308 x 0.649 / 0.433 l 11 (taper) 0.065 l , 12.0 w / 37.7 w 11.43 x 11.00 / 2.64 0.450 x 0.433 / 0.104 l 12 0.022 l , 37.0 w 4.04 x 2.64 0.159 x 0.104 l 13 0.035 l , 52.0 w 6.55 x 1.60 0.258 x 0.063 1 electrical characteristics are rounded. rf _ in rf _ out a 092211 efl - v 4 _ cd _ 5 - 6 - 09 q 1 q q 1 c 1 c 3 c 2 r 1 r 2 c 7 r 7 r 6 c 5 c 6 r 4 r 5 r 8 c 9 c 8 c 10 c 17 c 11 c 13 c 12 c 14 c 16 c 21 c 20 c 19 c 18 r 3 c 22 c 15 l 2 c 25 c 23 c 24 l 1 c 4 1 0 0 h f k 7 j n 1 0 0 h f k 7 j n c 6
data sheet 7 of 10 rev. 02, 2009-05-27 PTFA092211EL ptfa092211fl confidential, limited internal distribution reference circuit assembly diagram (not to scale)* reference circuit (cont.) component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 tantalum capacitor, 10 f, 35 v digi-key 399-1655-2-nd c5, c15, c21 capacitor, 0.1 f digi-key pcc104bct-nd c12, c18 capacitor, 1 f digi-key 445-1411-1-nd c7, c8, c11, c17, c25 ceramic capacitor, 33 pf atc 100b 330 c9 ceramic capacitor, 3.9 pf atc 100b 3r9 c10 ceramic capacitor, 6.8 pf atc 100a 6r8 c16, c22 tantalum capacitor, 10 f, 50 v garrett electronics tpse106k050r0400 c13, c19 multilayer ceramic capacitor, 10 f, 50 v digi-key 445-3497-2-nd c14, c20 electrolitic capacitor, 100 f, 50 v digi-key p5571-nd c23, c24 ceramic capacitor, 2.6 pf atc 100b 2r6 c6 capacitor, 20 nf atc atc200b 203 l1, l2 ferrite, 8.9 mm elna magnetics bds 4.6/3/8.9-4s2 q1 transistor infineon technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor, 1.2 k-ohms digi-key p1.2kgct-nd r2 chip resistor, 1.3 k-ohms digi-key p1.3kgct-nd r3 chip resistor, 2 k-ohms digi-key p2kect-nd r4 potentiometer, 2 k-ohms digi-key 3224w-202etr-nd r5, r8 chip resistor, 10 ohms digi-key p10ect-nd r6, r7 chip resistor, 5.1 k-ohms digi-key p5.1kect-nd *gerber files for this circuit available on request l2 l 11 l 12 l 13 l 7 c11 33pf c12 1f c14 100f 50v c13 10f 50v l1 c17 33pf c18 1f c21 0.1f r3 2k v c3 0.001f c2 0.001f q1 bcp56 r2 1.3k v qq1 lm7805 c1 0.001f v dd r5 10 v r4 2k v r1 1.2k v c8 33pf l 1 c9 3.9pf l 2 l 3 l 4 j1 j2 c16 10f 50v c15 0.1f c19 10f 50v c22 10f 50v c20 100f 50v v dd r6 2.4k v c6 20nf c4 10f 35v c5 0.1f r7 2.4k v c7 33pf c10 6.8pf l 5 r8 10 v l 6 c23 2.6pf c25 33pf c24 2.6pf l 9 dut l 8 l 10
data sheet 8 of 10 rev. 02, 2009-05-27 PTFA092211EL ptfa092211fl confidential, limited internal distribution package outline specifications package h-33288-2 d iagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specified otherwise. 4. pins: d = drain, s = source, g = gate. 5. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 6. gold plating less than 0.25 micron [10 microinch]. c66065-a0003-c723-01-0027 h-33288-2.dwg find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower
data sheet 9 of 10 rev. 02, 2009-05-27 PTFA092211EL ptfa092211fl confidential, limited internal distribution package outline specifications (cont.) package h-34288-2 c66065-a0003-c724-01-0027 h-34288-2.dwg d iagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specified otherwise. 4. pins: d = drain, s = source, g = gate. 5. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 6. gold plating less than 0.25 micron [10 microinch]. find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower
data sheet 10 of 10 rev. 02, 2009-05-27 PTFA092211EL/fl v4 confidential, limited internal distribution revision history: 2009-05-27 data sheet previous version: 2009-04-17 preliminary data sheet page subjects (major changes since last revision) 1, 2 update information 3, 4 modify and update graphs 6, 7 update circuit diagrams and information 5 update impedance data goldmos ? is a registered trademark of infineon technologies ag. edition 2009-05-27 published by infineon technologies ag 81726 munich , germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international
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